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Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures
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View: Figures


Image of FIG. 1.
FIG. 1.

The growth rate of Si layers on (001)Si and using (triangles) and (squares), in equivalent Si atomic flow, as a function of the growth temperature.

Image of FIG. 2.
FIG. 2.

Refractive index and Extinction coefficient of the films deposited with 48 mTorr flow; [(a) and (b)] reproduce the evolution of and with the growth temperature when the films are deposited on ; [(c) and (d)] give the comparison of and coefficients for a film deposited at on (001)Si (sample) and of reference samples (polycrystalline, amorphous, and monocrystalline Si). The comparison shows that in this situation, the film presents similar optical parameters than polycrystalline Si.

Image of FIG. 3.
FIG. 3.

TEM cross-section images of: (a) the film deposited at on (001)Si. The inset reproduces the SAD pattern typical of the amorphous phase (diffuse ring and total absence of spots); (b) the thin c-Si layer which evidences (111) facets at the a/c interface; (c) the film after total crystallization by in situ SPE at during 600 s. The inset reproduces the corresponding SAD pattern which exhibits only the [110] direction of the monocrystal; (d) of the same area at high resolution to show the atomically flat top surface.

Image of FIG. 4.
FIG. 4.

(a) Schematization of the initial MOS structure; (b) Schematization of the structure after deposition of a-Si on the initial structure. The corresponding TEM cross-section images of the experimental a-Si layer on the different areas are given; (c) Schematization of the structure resulting from the selective crystallization process. The corresponding experimental TEM cross-section images of the a-Si and c-Si on the different areas are shown.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures