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Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor
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http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3302462
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FIG. 1.

Experimental common-emitter I-V characteristics of the studied device at room temperature.

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FIG. 2.

Corresponding energy band diagram of the studied device under forward bias.

Image of FIG. 3.

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FIG. 3.

Gummel plots of the device at .

Image of FIG. 4.

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FIG. 4.

Dependence of current gain on the collector current at .

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/content/aip/journal/apl/96/6/10.1063/1.3302462
2010-02-10
2014-04-18

Abstract

The performance of an InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure is demonstrated by experimental results. The injecting electrons from superlattice emitter are easy to transport into the superlattice-base region for promoting the collector current by tunneling behavior. Furthermore, the average energy gap of base regime is substantially reduced by the use of InGaAs/GaAs superlattice structure for the requirement of low turn-on voltage. Experimentally, the transistor exhibits a maximum common-emitter current gain of 295 and a relatively low collector-emitter offset voltage of only 16 mV. In particular, the ideality factor of collector current near to unity is obtained.

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Scitation: Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3302462
10.1063/1.3302462
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