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Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

topographic image of the AlGaAs matrix. The position of the first anneal step and the wetting layer is indicated by, respectively, the black arrow at the top and the black arrow on the right. The inset shows a close up of the wetting layer where the position of the wetting layer is indicated by the white arrow.

Image of FIG. 2.
FIG. 2.

topographic image of a typical GaAs/AlGaAs QD (top) and an average cross-sectional profile (top graph) and separation between bilayers (bottom graph) along the line in the top figure.

Image of FIG. 3.
FIG. 3.

topographic image (left) of two QDs. An atomic grid is overlain on top of a close up of the QD dot (right). Al and Ga atoms in the QD are indicate by, respectively, red and yellow squares.

Image of FIG. 4.
FIG. 4.

Profile of three quantum dots as measured by X-STM (open circles). A Gaussian function is fitted to the largest dot (red line). The other two dots (green and blue line) are assumed to have the same 3D-structure as the largest dot but cleaved off center. The projection of the 111-direction on the cleavage plane is given by the dashed black line.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy