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High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation
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10.1063/1.3309595
/content/aip/journal/apl/96/6/10.1063/1.3309595
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3309595
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Figures

Image of FIG. 1.
FIG. 1.

Dependence of effective lifetime (both in and out of solution) on injection level for high resistivity n-type silicon passivated with quinhydrone-methanol. A high effective lifetime of 3.3 ms at has been measured.

Image of FIG. 2.
FIG. 2.

Dependence of measured effective lifetime (both in and out of solution) on injection level for low resistivity p-type silicon passivated with quinhydrone-methanol. A high effective lifetime of 1.1 ms at has been measured.

Image of FIG. 3.
FIG. 3.

Schematic showing the likely bonds formed at the hydrogen terminated silicon surface passivated with 0.01 mol/L quinhydrone in methanol. QHY-ME is assumed to form strong bonds with silicon when in solution. The atmosphere attack is assumed to be the reason for the appearance of oxidation bonds and thus degradation in lifetime.

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/content/aip/journal/apl/96/6/10.1063/1.3309595
2010-02-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3309595
10.1063/1.3309595
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