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Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
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10.1063/1.3318249
/content/aip/journal/apl/96/6/10.1063/1.3318249
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3318249
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Figures

Image of FIG. 1.
FIG. 1.

(a) XTEM image of the Si-core/Ge-shell multi-NW p-MOSFET with gate stack fabricated by a top-down approach. Inset shows plan view schematic of the device with a cutline indicating where the cross-section was taken. (b) High-magnification XTEM image of the Si-core/Ge-shell NW demonstrating Ge facets.

Image of FIG. 2.
FIG. 2.

(a) Transfer characteristics of 500 parallel Si-core/Ge-shell with NW length of for various core Si NW widths in the range of 20–50 nm; (b) measured inversion capacitance of each wire normalized per wire length as a function of . Inset shows the schematic of the core/shell NW with definition for and .

Image of FIG. 3.
FIG. 3.

(a) Effective hole mobility of Si-core/Ge-shell NW MOSFETs for various in the range of 20–70 nm calculated from low-field conductance and measured inversion charge capacitance. (b) Plot of the effective hole mobility of a function of at two different over-drive voltages . Increased hole mobility is observed with decreasing NW width.

Image of FIG. 4.
FIG. 4.

Finite element (a) transverse and (b) longitudinal stress simulations of wide and narrow Si-core/Ge-shell NWs based on 1.4 GPa intrinsic stress of the gate stack. Both NWs show similar longitudinal compressive stress. The wide NW shows transverse compression while narrow NW shows transverse tension in the top Ge surface.

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/content/aip/journal/apl/96/6/10.1063/1.3318249
2010-02-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3318249
10.1063/1.3318249
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