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(a) XTEM image of the Si-core/Ge-shell multi-NW p-MOSFET with gate stack fabricated by a top-down approach. Inset shows plan view schematic of the device with a cutline indicating where the cross-section was taken. (b) High-magnification XTEM image of the Si-core/Ge-shell NW demonstrating Ge facets.
(a) Transfer characteristics of 500 parallel Si-core/Ge-shell with NW length of for various core Si NW widths in the range of 20–50 nm; (b) measured inversion capacitance of each wire normalized per wire length as a function of . Inset shows the schematic of the core/shell NW with definition for and .
(a) Effective hole mobility of Si-core/Ge-shell NW MOSFETs for various in the range of 20–70 nm calculated from low-field conductance and measured inversion charge capacitance. (b) Plot of the effective hole mobility of a function of at two different over-drive voltages . Increased hole mobility is observed with decreasing NW width.
Finite element (a) transverse and (b) longitudinal stress simulations of wide and narrow Si-core/Ge-shell NWs based on 1.4 GPa intrinsic stress of the gate stack. Both NWs show similar longitudinal compressive stress. The wide NW shows transverse compression while narrow NW shows transverse tension in the top Ge surface.
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