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Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits
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10.1063/1.3309703
/content/aip/journal/apl/96/7/10.1063/1.3309703
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/7/10.1063/1.3309703

Figures

Image of FIG. 1.
FIG. 1.

FT-IR absorbance versus wavenumber , shown with offsets for better viewing. The nitrogen to silane precursor gas ratio increases from film A to E.

Image of FIG. 2.
FIG. 2.

(a) Photograph of notch-type aluminum LC resonator with a parallel plate capacitor. Size of the capacitor (shown in right) is . The substrate is sapphire which appears black in the photograph. (b) Loss tangent curves of samples A to E measured at 30 mK (shown with markers) with the TLS model fit in Eq. (2) (shown with fit curves).

Image of FIG. 3.
FIG. 3.

Density of states as a function of bonding peak area in FT-IR measurement.

Tables

Generic image for table
Table I.

film and resonator sample properties: precursor gas ratio , refractive index measured at 633 nm, compressive stress (MPa), ratio of N–H bond concentration to total N–H and Si–H concentration , and resonator loss tangent fit parameters.

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/content/aip/journal/apl/96/7/10.1063/1.3309703
2010-02-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/7/10.1063/1.3309703
10.1063/1.3309703
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