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(a) S and C state magnetization configurations in rectangular thin-film elements. (b) S state element: shape and parameters. (c) Remanent magnetization configuration in a Permalloy S state element (dimensions: , , , , and ).
Normalized hysteresis curves are shown for three different biasing fields (0, −100, and ) that are applied in-plane, perpendicular to the main axis of the S state element; is the saturation magnetization. At selected applied fields, the corresponding magnetization patterns are shown ( and components). A shift of the hysteresis curves is observed as a function of the biasing field .
Truth table of the S state element. The inputs A and B are for the particular example and , respectively. The negative (positive) values corresponding to logic 0 and the positive (negative) values to 1 for input A (input B). AND and OR behavior is obtained by presetting the initial magnetization to and , respectively.
Schematics of a programmable magnetologic gate incorporating an S-state element as the free layer. The magnetoresistive trilayer structure can be part of GMR or spin-dependent tunneling devices. The device is addressed by external, perpendicular magnetic oersted fields (currents and ).
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