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Effect of Ge passivation on interfacial properties of crystalline thin films grown on Si substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

RHEED patterns of epi- on (a) Si(111) and (b) Si(001) substrates. 2 ML Ge was deposited on Si surface at prior to the oxide layer growth.

Image of FIG. 2.
FIG. 2.

UPS spectra from clean Si(111) surfaces with various Ge coverage, obtained at a photon energy of 21.2 eV. (a) without Ge coverage (b) 1.0 ML Ge coverage on Si(111) and (c) 3.0 ML Ge coverage on Si(111) . The spectra were taken along azimuth at an emission angle of with respect to surface normal.

Image of FIG. 3.
FIG. 3.

(a) characteristics of MOS capacitors depicting the effect of (1.5 ML) Ge coverage on Si(001) substrates. The capacitor fabricated on Ge passivated Si surface shows much better behavior. (b) Influence of Ge coverage on hysteresis for capacitors showing significant improvement in hysteresis behavior after 1.5 ML Ge coverage.

Image of FIG. 4.
FIG. 4.

(a) The characteristics of MOS capacitors as a function of Ge coverage. The flat band voltage increases monotonically with increasing Ge coverage, inferring a strong influence of Ge adatoms on Si surface. (b) Density of interface traps for capacitors fabricated on clean and Ge passivated Si(111) wafers, exhibiting significant improvement on values.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates