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Simplified 2D schematic illustration of the device applied in 2D TCAD simulation.
(a) Transfer and (b) output characteristics of the device with poly-Si channel , gate , and gate under DG and SG modes of operation. Both experimental (solid and dashed lines) and simulated (symbols) data are shown for comparison. In (b), the drain current of SG mode is multiplied by 2 for fair comparison with that of DG mode.
(a) Extracted as a function of gate voltage for the device characterized in Fig. 2. The inset shows some of the vs T curves for extracting . DG mode shows reduced as compared with the SG mode. (b) The simulated values at , 3, and 5 nm.
Comparisons of experimental and simulated TEF under DG and SG operations.
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