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Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells
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10.1063/1.3327331
/content/aip/journal/apl/96/8/10.1063/1.3327331
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3327331
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

EL and EQE spectra of the InGaN/GaN MQW solar cells.

Image of FIG. 2.
FIG. 2.

and characteristics of the InGaN/GaN MQW solar cells under the illumination of AM 1.5G.

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional HAADF STEM image of the InGaN/GaN MQWs, showing disconnected InGaN layers. (b) Intensity profiles of measured by EDS scan along the dashed line in (a).

Image of FIG. 4.
FIG. 4.

(a) curves and (b) FF and of the InGaN/GaN MQW solar cells at different temperatures under the illumination of a white light source.

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/content/aip/journal/apl/96/8/10.1063/1.3327331
2010-02-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3327331
10.1063/1.3327331
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