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(a) Schematic of the electrode array and DEP assembly setup. (b) Representative SEM image of an individual SWNT between source (s) and drain (d) electrodes. Scale bar: 500 nm. (c) AFM image of the same SWNT in (b). Scale bar: 500 nm. (d) Height profile of the SWNT showing a diameter of . (e) Schematic diagram of device geometry and electronic transport measurement setup.
(a) Transfer characteristics of a representative SWNT FET device at , −0.5, −1.0, and −2.0 V. (b) Output characteristics showing currents up to in the saturation regime.
(a) Scatter plot of mobility vs on-conductance for 35 FET devices. The median values of mobility and on-conductance are and , respectively. (b) vs at for our highest performance FET device . Inset: Mobility vs gate voltage showing a peak mobility value of . (c) Representative Raman spectroscopy of an individual SWNT device.
Comparison of some recent SWNT solution processed device parameters, this work, and one CVD SWNT made by direct growth methods (N/R: Not reported).
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