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Tuning superconductivity by carrier injection
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10.1063/1.3327825
/content/aip/journal/apl/96/8/10.1063/1.3327825
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3327825
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sketch of sample geometry. (b) SEM micrograph of a sample in “z” configuration, seen from top. I-V characteristics of as prepared stack (c), after the first injection cycle (d), after the second injection cycle (d). I-Vs were measured at 4.2 K. (f) Resistance vs temperature dependencies. Curves (1), (2), and (3) represent the states with I-Vs (c), (d), and (f), respectively. Curve (4) corresponds to the state after current injection-induced undoping of the state (3).

Image of FIG. 2.
FIG. 2.

Doping and undoping dynamics of the same sample as in Fig. 1. Thin solid lines are the best fits by a sum of two exponentials.

Image of FIG. 3.
FIG. 3.

Resistance vs temperature dependencies of stack measured after repeated sequences of doping and undoping.

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/content/aip/journal/apl/96/8/10.1063/1.3327825
2010-02-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning superconductivity by carrier injection
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3327825
10.1063/1.3327825
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