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Application of nanoimprinting technology to organic field-effect transistors
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The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors(OFETs) with a mobility of approximately using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobilityanisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductorfilms in integrated circuits.
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