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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of layer
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10.1063/1.3330929
/content/aip/journal/apl/96/8/10.1063/1.3330929
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3330929
/content/aip/journal/apl/96/8/10.1063/1.3330929
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/content/aip/journal/apl/96/8/10.1063/1.3330929
2010-02-24
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3330929
10.1063/1.3330929
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