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thin-film transistors fabricated by spray pyrolysis
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10.1063/1.3330944
/content/aip/journal/apl/96/8/10.1063/1.3330944
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3330944
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Output and (b) transfer characteristics measured for a BG-BC transistor employing gold S-D electrodes (, ). Inset: The BG-BC transistor architecture used. (c) Schematic representation of the simplified energy band diagram of and aluminum and gold electrodes.

Image of FIG. 2.
FIG. 2.

(a) Output and (b) transfer characteristics of BG-TC transistor employing aluminum S-D electrodes (, ). Inset: The BG-TC transistor architecture used. (c) Arrhenius plot of electron mobility, measured in saturation vs inverse temperature. An activation energy of approximately 90 meV is calculated.

Image of FIG. 3.
FIG. 3.

(a) Electron field-effect mobility, measured in saturation, as a function of exposure time to ambient air. (b) Current on/off ratio as a function of exposure time to ambient air. All electrical measurements were performed in the dark.

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/content/aip/journal/apl/96/8/10.1063/1.3330944
2010-02-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: TiO2 thin-film transistors fabricated by spray pyrolysis
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/8/10.1063/1.3330944
10.1063/1.3330944
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