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dc resistance as a function of temperature measured with 1 nA bias current. Inset: scanning electron micrograph of Ti nanobolometer device on silicon substrate. The strips of Ti below the Nb contacts are an artifact of the fabrication process.
Schematic of experimental setup for fauxton testing. LP stands for low-pass filter and BP stands for band-pass filter. Some attenuators and filters have been omitted for clarity.
Average and single-shot device response to 50 THz fauxton.
Histograms of single-shot device response to 50 THz fauxtons, 25 THz fauxtons, and no fauxtons. Response with no fauxtons is measured with the device optimally biased for detection. With the device above , we measure the noise contribution from the amplifier.
Measured noise spectrum at the mixer input, expressed as a noise temperature referred to the input of the first stage amplifier. The noise is measured both with the device at the optimum bias point and with the device in the nonsuperconducting state.
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