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Energy resolution of terahertz single-photon-sensitive bolometric detectors
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View: Figures


Image of FIG. 1.
FIG. 1.

dc resistance as a function of temperature measured with 1 nA bias current. Inset: scanning electron micrograph of Ti nanobolometer device on silicon substrate. The strips of Ti below the Nb contacts are an artifact of the fabrication process.

Image of FIG. 2.
FIG. 2.

Schematic of experimental setup for fauxton testing. LP stands for low-pass filter and BP stands for band-pass filter. Some attenuators and filters have been omitted for clarity.

Image of FIG. 3.
FIG. 3.

Average and single-shot device response to 50 THz fauxton.

Image of FIG. 4.
FIG. 4.

Histograms of single-shot device response to 50 THz fauxtons, 25 THz fauxtons, and no fauxtons. Response with no fauxtons is measured with the device optimally biased for detection. With the device above , we measure the noise contribution from the amplifier.

Image of FIG. 5.
FIG. 5.

Measured noise spectrum at the mixer input, expressed as a noise temperature referred to the input of the first stage amplifier. The noise is measured both with the device at the optimum bias point and with the device in the nonsuperconducting state.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy resolution of terahertz single-photon-sensitive bolometric detectors