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(a) Schematic diagram of TFT structure based on SiNCs, (b) Scanning electron micrograph (SEM) of Si nanocrystal films. The inset is the transmission electron microscopy image of one SiNC with diameter of .
Characteristics of , which are measured at at room temperature with sweeping from positive voltages to negative voltages. The measurement is started, respectively, in the situation as follows: (a) the measurement is started at initial states (without charging the SiNCs), (b) 10 min after the initial measurement, the second time measurement is started and (c) after the second time measurement, is applied −5 V for 30 s, then the third time measurement is started.
(a) Demonstration of the device with structure, (b) characteristics measured for to 40 V, (c) characteristics measured for .
Schematic of the blocked SiNCs band diagram under different measurement conditions. Carriers transport in SiNCs is accompanied with directly tunneling (described by the blue arrows), trapping (described by the red arrows) and detrapping process (described by the green arrows). (a) In the initial states, SiNC thin film is applied . During the measurement, some carriers are trapped at the interfaces between the oxide shells and SiNC cores. (b) After being applied , SiNC thin film is applied . Those trapped carriers, which are induced by applying , can be released as the valence-band edge bending direction has been changed.
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