1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fabrication and characterization of an induced GaAs single hole transistor
Rent:
Rent this article for
USD
10.1063/1.3336011
/content/aip/journal/apl/96/9/10.1063/1.3336011
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3336011
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Two terminal conductance vs left QPC (middle), right QPC (leftmost), and PG (rightmost) bias with and magnetic field . The inset shows a scanning electron micrograph of the device, etched regions are black and the seven gates are gray. (b) Three consecutive measurements of vs PG bias at , , and demonstrating device stability. The data in (b) was obtained at .

Image of FIG. 2.
FIG. 2.

(a) Conductance vs plunger gate bias ; and (b) vs time for several set values of [the corresponding locations on the CB peak in (a) are indicated by the arrows]. In both cases and . The vertical scale bars in (b) show the maximum magnitude of the peak-to-peak charge fluctuations for each time trace.

Image of FIG. 3.
FIG. 3.

Grayscale plot of the differential conductance (color axis) vs PG bias (-axis) and applied dc source-drain bias (-axis), obtained with and . The dark/light regions correspond to low/high conductance. Coulomb diamonds are clearly observed and appear tilted due to asymmetrically applied source-drain bias.

Loading

Article metrics loading...

/content/aip/journal/apl/96/9/10.1063/1.3336011
2010-03-02
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of an induced GaAs single hole transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3336011
10.1063/1.3336011
SEARCH_EXPAND_ITEM