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Fabrication and characterization of an induced GaAs single hole transistor
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Two terminal conductance vs left QPC (middle), right QPC (leftmost), and PG (rightmost) bias with and magnetic field . The inset shows a scanning electron micrograph of the device, etched regions are black and the seven gates are gray. (b) Three consecutive measurements of vs PG bias at , , and demonstrating device stability. The data in (b) was obtained at .

Image of FIG. 2.
FIG. 2.

(a) Conductance vs plunger gate bias ; and (b) vs time for several set values of [the corresponding locations on the CB peak in (a) are indicated by the arrows]. In both cases and . The vertical scale bars in (b) show the maximum magnitude of the peak-to-peak charge fluctuations for each time trace.

Image of FIG. 3.
FIG. 3.

Grayscale plot of the differential conductance (color axis) vs PG bias (-axis) and applied dc source-drain bias (-axis), obtained with and . The dark/light regions correspond to low/high conductance. Coulomb diamonds are clearly observed and appear tilted due to asymmetrically applied source-drain bias.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of an induced GaAs single hole transistor