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Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
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10.1063/1.3337098
/content/aip/journal/apl/96/9/10.1063/1.3337098
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3337098
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Figures

Image of FIG. 1.
FIG. 1.

Room temperature values of (a) hole concentration , (b) Hall mobility , and (c) Doppler broadening parameter for GaN:Mg epilayers as a function of [Mg]. for UID epilayer is shown by the arrow on the left vertical axis. for nearly -free GaN and (0001) GaN:Mg are also shown by the arrows on the right vertical axis (Ref. 20).

Image of FIG. 2.
FIG. 2.

PL spectra at (a) 8 K and (b) 300 K of UID and GaN:Mg epilayers. PL spectra of a (0001) GaN:Mg epilayer grown by the same reactor are shown in the bottom traces.

Image of FIG. 3.
FIG. 3.

NBE PL spectra at 8 K of UID and GaN:Mg epilayers. PL spectrum of the (0001) GaN:Mg epilayer is also shown in bottom.

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/content/aip/journal/apl/96/9/10.1063/1.3337098
2010-03-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3337098
10.1063/1.3337098
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