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Electron beam induced current investigations of interface exposed to chemical and electrical stresses
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View: Figures


Image of FIG. 1.
FIG. 1.

EBIC images of a contact. All images are taken with a 10 kV beam acceleration. (a), (c), and (e) were taken at 0 V applied bias to the Pt contact. (b), (d), and (f) are taken at −0.5 V bias. (a) and (b) were imaged immediately after fabrication; (c) and (d) after annealing the contact in air at for 10 min; and (e) and (f) after stressing the air annealed contact at −10 V for 1 h.

Image of FIG. 2.
FIG. 2.

The optical (a) and AFM (b) images of a (001) surface of single crystal after being etched in buffered hydrofluoric acid for 10 min. Square etch pits indicative of dislocations form arrays extending along the [001] and [010] direction.

Image of FIG. 3.
FIG. 3.

(a) is the schematic of how local variations in the depletion edge leads to EBIC contrast. (b) and (c) show two different sets of the integrated oxygen vacancy profiles along dislocation and bulk. The intersections of the two horizontal dotted lines with the integrated vacancy populations show the effects of an applied external bias on the depletion region width.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron beam induced current investigations of Pt/SrTiO3−x interface exposed to chemical and electrical stresses