Full text loading...
EBIC images of a contact. All images are taken with a 10 kV beam acceleration. (a), (c), and (e) were taken at 0 V applied bias to the Pt contact. (b), (d), and (f) are taken at −0.5 V bias. (a) and (b) were imaged immediately after fabrication; (c) and (d) after annealing the contact in air at for 10 min; and (e) and (f) after stressing the air annealed contact at −10 V for 1 h.
The optical (a) and AFM (b) images of a (001) surface of single crystal after being etched in buffered hydrofluoric acid for 10 min. Square etch pits indicative of dislocations form arrays extending along the  and  direction.
(a) is the schematic of how local variations in the depletion edge leads to EBIC contrast. (b) and (c) show two different sets of the integrated oxygen vacancy profiles along dislocation and bulk. The intersections of the two horizontal dotted lines with the integrated vacancy populations show the effects of an applied external bias on the depletion region width.
Article metrics loading...