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Optical anisotropies of Si grown on step-graded SiGe(110) layers
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10.1063/1.3339881
/content/aip/journal/apl/96/9/10.1063/1.3339881
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3339881
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Left: (a) and (b) are RD spectra of structures A and B, while (c) is of a Si(110) nonstressed substrate. Solid line superimposed with spectra (b) is of a Si(110) bar tensile strained mechanically along [001]. Right: first-energy derivative of the RD spectra at transition. Solid lines are fits to the derivative spectra. Broadening energies and phase angles are as indicated. See text for details.

Image of FIG. 2.
FIG. 2.

X-ray reciprocal space maps. [(a) and (b)] sample A and [(c) and (d)] sample B. The point around which [(a) and (c)] were measured was (331), while the intensities around the (260) reciprocal point are drawn in [(b) and (d)].

Image of FIG. 3.
FIG. 3.

(a) Model of microtwin formation (black circles) and its surroundings (white circles). The upper part corresponds to the projection onto the (110) plane. (b) and (c) are micro-RD spectra measured at two individuals pixels for two different areas of the surface for each structure.

Image of FIG. 4.
FIG. 4.

[(a) and (b)] Micro-RD maps of the samples A and B and their corresponding AFM images. The RMS roughness of the two samples was 9.8 and 68 nm, respectively.

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/content/aip/journal/apl/96/9/10.1063/1.3339881
2010-03-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical anisotropies of Si grown on step-graded SiGe(110) layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3339881
10.1063/1.3339881
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