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Junction properties of Au/ZnO single nanowire Schottky diode
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10.1063/1.3339883
/content/aip/journal/apl/96/9/10.1063/1.3339883
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3339883
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of Au/ZnO NW Schottky diode at different temperature ranges from 300 to 523 K. Inset shows the SEM image of the Schottky diode. (b) Variation in barrier height and ideality factor with temperature (k). (c) Plot of vs 1/2kT. (d) curve under forward bias condition at 300 and 523 K and the fitting curve in the TFE regime.

Image of FIG. 2.
FIG. 2.

(a) core level peak of ZnO NW without Au over-layer. The low energy region represents the spectrum of valance band region. A linear fit is used to determine the energy of the valance band edge. (b) core level at the Au/ZnO NW interface.

Image of FIG. 3.
FIG. 3.

Schematic band diagram of Au/ZnO NW Schottky diode (a) under zero bias and (b) with a forward bias.

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/content/aip/journal/apl/96/9/10.1063/1.3339883
2010-03-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Junction properties of Au/ZnO single nanowire Schottky diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3339883
10.1063/1.3339883
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