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Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
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10.1063/1.3340939
/content/aip/journal/apl/96/9/10.1063/1.3340939
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3340939
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy (conduction and valence) band profile of (Al,In) GaN blue LEDs. (Energies are offset for clarity.) Type A adapts p- SLs for EBL and type B does p- for EBL.

Image of FIG. 2.
FIG. 2.

L-I-V curve of the InGaN blue LED measured under cw operation condition for type (a) A and (b) B depends on temperature variation, respectively.

Image of FIG. 3.
FIG. 3.

EQE of type (a) A and (b) B as a function of temperature. Inset of (a) shows suppressed EQE drop for temperature increase, while inset of (b) presents conventional EQE drop for temperature increase.

Image of FIG. 4.
FIG. 4.

Electron and hole concentration at fifth QW and its ratio for type A and B with temperature variation.

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/content/aip/journal/apl/96/9/10.1063/1.3340939
2010-03-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3340939
10.1063/1.3340939
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