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Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
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10.1063/1.3340943
/content/aip/journal/apl/96/9/10.1063/1.3340943
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3340943

Figures

Image of FIG. 1.
FIG. 1.

(a) HIZO solution TG-DTA curve (10 at. % of Hf/Zn) (b) TEM plane image and selective area electron diffraction pattern of a HIZO thin film (10 at. % of Hf/Zn).

Image of FIG. 2.
FIG. 2.

(a) Hall effect measurements comparing IZO system electrical effects between Hf and Ga, using 0 to 5 at. % of Ga (the top of and the bottom of ) and Hf (the bottom of and the top of )/Zn, (b) IZO system XPS spectra of the region with 10 at. % of Ga (the bottom) and Hf (the top)/Zn.

Image of FIG. 3.
FIG. 3.

Comparison of transfer characteristics between the HIZO and GIZO TFTs (10 at. % of Hf or Ga/Zn).

Tables

Generic image for table
Table I.

Comparison of the electrical characteristics for solution-processed HIZO and GIZO thin films and TFTs with a 10 at. % of Hf and Ga to Zn.

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/content/aip/journal/apl/96/9/10.1063/1.3340943
2010-03-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3340943
10.1063/1.3340943
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