1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor
Rent:
Rent this article for
USD
10.1063/1.3340947
/content/aip/journal/apl/96/9/10.1063/1.3340947
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3340947
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of a p-FET strained by the DLC liner stressor with , measured at 26, 76, and . is extracted at constant current of . decreases with increasing temperature. (b) DIBL of the unstrained and strained P-FETs as a function of . DIBL is defined to be the change in threshold voltage per unit change in drain bias. At each gate length, DIBL for both groups of transistors are similar. The dispersion or scatter in data is due to device-to-device variation introduced during fabrication.

Image of FIG. 2.
FIG. 2.

(a) Saturation threshold voltage and (b) normalized change in saturation drive current as functions of characterization temperature for a p-FET with DLC liner stressor. The gate length of the p-FET is 90 nm. Linear regression was performed for the measured data, giving best-fit lines with slopes denoted by and in (a) and (b), respectively.

Image of FIG. 3.
FIG. 3.

(a) Backscattering ratio of both the unstrained and DLC stressed p-FETs vs DIBL. (b) Ballistic efficiency of both the control and DLC stressed p-FETs vs DIBL. DIBL was measured at room temperature. For P-FETs with the DLC liner stressor, obvious degradation of and could be observed.

Image of FIG. 4.
FIG. 4.

(a) Hole injection velocity is significantly increased for transistors with DLC liner stressor. (b) The percentage increase in hole injection velocity is plotted against the drive current enhancement. The increase in hole injection velocity more than compensates for the reduction in , giving a net increase in . The and data were obtained from transistor data measured in the range of 25 to .

Loading

Article metrics loading...

/content/aip/journal/apl/96/9/10.1063/1.3340947
2010-03-05
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3340947
10.1063/1.3340947
SEARCH_EXPAND_ITEM