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Highly polarized Raman scattering anisotropy in single GaN nanowires
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10.1063/1.3343347
/content/aip/journal/apl/96/9/10.1063/1.3343347
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3343347
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Figures

Image of FIG. 1.
FIG. 1.

Raman spectrum of a GaN nanowire ensemble measured with 514 nm excitation wavelength. Black dotted lines show Raman mode frequencies reported in the literature (Ref. 10). The asterisks mark Raman modes of the silicon substrate. Inset is a SEM image of the as grown NW sample.

Image of FIG. 2.
FIG. 2.

Raman spectra of single GaN nanowires measured in geometry. On the right, SEM micrographs of the corresponding nanowires.

Image of FIG. 3.
FIG. 3.

Raman spectra of the same GaN nanowire for different orientations of the nanowire axis with respect to the polarization of the excitation light. Insets show Raman images of the two used geometries obtained by mapping the intensity of the band of the graphite substrate (the lateral resolution is low and therefore the images can be used only to probe the wire orientation). The white arrows illustrate the polarization of the incident light. For each wire two measurements were performed. A–D mark the region where the corresponding spectra were measured.

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/content/aip/journal/apl/96/9/10.1063/1.3343347
2010-03-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly polarized Raman scattering anisotropy in single GaN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3343347
10.1063/1.3343347
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