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Competitiveness between direct and indirect radiative transitions of Ge
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10.1063/1.3352048
/content/aip/journal/apl/96/9/10.1063/1.3352048
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3352048
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The PL spectra of the Ge (100) diode at room temperature. The direct band transition in valley increases with increasing pumping power.

Image of FIG. 2.
FIG. 2.

Temperature dependent PL at the temperature of . Direct band gap transition enhancement is due to carrier distribution toward the high energy part as well as the decrease in the band gap difference between direct and indirect band gaps at elevated temperature.

Image of FIG. 3.
FIG. 3.

The EL spectra of the Ge (100) diode at current (a) lower than 400 mA, and (b) higher than 400 mA. The redshift is due to device heating. The direct band transition is enhanced with increasing drive current.

Image of FIG. 4.
FIG. 4.

A luminescence spectrum fitted by the direct transition and indirect transition models.

Image of FIG. 5.
FIG. 5.

(a) Carrier ratio in valley as a function of electron Fermi level and (b) the direct to indirect intensity ratio vs direct to indirect carrier density ratio. The slope of gives the relative direct transition rate with respect to the indirect transition rate.

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/content/aip/journal/apl/96/9/10.1063/1.3352048
2010-03-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Competitiveness between direct and indirect radiative transitions of Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3352048
10.1063/1.3352048
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