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(a) XRD pattern obtained from sample G. The inset shows the XRD patterns acquired from samples A, C, D, and E. (b) Variation in the position and full width at half maximum of the (0002) peak from the GaN films with various thicknesses.
FE characteristics of samples A–G: (a) FE current density as a function of the applied electric field . The inset shows the variation in and observed from the GaN films with various thicknesses. (b) Corresponding FN plots of vs .
AFM images of (a) sample A, (b) sample B, (c) sample C, and (d) sample D.
Effective emission areas calculated from the linear fit of the FN plots. The inset illustrates the polarization FE enhancement mechanism incorporating ballistic electron transport in the oriented nanostructured GaN films.
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