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Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate
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10.1063/1.3352556
/content/aip/journal/apl/96/9/10.1063/1.3352556
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3352556
/content/aip/journal/apl/96/9/10.1063/1.3352556
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/content/aip/journal/apl/96/9/10.1063/1.3352556
2010-03-01
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3352556
10.1063/1.3352556
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