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Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate
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10.1063/1.3352556
/content/aip/journal/apl/96/9/10.1063/1.3352556
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3352556
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD pattern obtained from sample G. The inset shows the XRD patterns acquired from samples A, C, D, and E. (b) Variation in the position and full width at half maximum of the (0002) peak from the GaN films with various thicknesses.

Image of FIG. 2.
FIG. 2.

FE characteristics of samples A–G: (a) FE current density as a function of the applied electric field . The inset shows the variation in and observed from the GaN films with various thicknesses. (b) Corresponding FN plots of vs .

Image of FIG. 3.
FIG. 3.

AFM images of (a) sample A, (b) sample B, (c) sample C, and (d) sample D.

Image of FIG. 4.
FIG. 4.

Effective emission areas calculated from the linear fit of the FN plots. The inset illustrates the polarization FE enhancement mechanism incorporating ballistic electron transport in the oriented nanostructured GaN films.

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/content/aip/journal/apl/96/9/10.1063/1.3352556
2010-03-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3352556
10.1063/1.3352556
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