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Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability
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10.1063/1.3353973
/content/aip/journal/apl/96/9/10.1063/1.3353973
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3353973
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V curves for (a) undoped GST, GST with oxygen contents of: (b) 16.7%, (c) 21.7%, and (d) 30.8%. Threshold voltages are indicated with vertical dashed lines in each figure. The melting down voltage of the GST with a 30.8% oxygen content is also indicated as a dashed line in (d). The first and second sweeps are indicated by black lines and red dots, respectively.

Image of FIG. 2.
FIG. 2.

AFM images of GST films with oxygen contents of: (a) 16.7%, (b) 21.7%, and (c) 30.8%, after an annealing treatment at .

Image of FIG. 3.
FIG. 3.

A complex impedance diagram of GST films with oxygen contents of 16.7% and 21.7% after an annealing treatment at . The smaller intercept of the abscissa indicates the resistance of the grain while the larger one indicates the sum of and the resistance of the grain boundary .

Image of FIG. 4.
FIG. 4.

Intensity of desorbed molecules (left axis) and temperature (right axis) for (a) an as-grown GST film, as-grown GST films with oxygen contents of: (b) 16.7% and (c) 30.8% are plotted as a function of heating time. The temperature increases up to (right axis) for 27 min and is then constant up to 60 min.

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/content/aip/journal/apl/96/9/10.1063/1.3353973
2010-03-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3353973
10.1063/1.3353973
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