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As doping of Si-based low-dimensional systems
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10.1063/1.3353987
/content/aip/journal/apl/96/9/10.1063/1.3353987
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3353987
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sample A: As concentration profile before the annealing (line with squares), after the (line with circles), after the plus the oxidizing process (line with triangles), and after the plus the oxidizing process (blue line with rhombs). (b) Sample B2: As concentration profile before the annealing (line with squares) and after the (line with circles).

Image of FIG. 2.
FIG. 2.

As concentration profile after the annealing, for the samples B1 (line with squares), B2 (line with circles), and B3 (line with triangles). The inset shows the K coefficient, as a function of the As implanted fluence.

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional Z-contrast STEM of the annealed B3 sample. (b) Cross-sectional Z-contrast STEM of the B sample (i.e., sample not implanted). (c) EFTEM analysis on the B3 sample obtained by selecting low-energy loss at 17 e.

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/content/aip/journal/apl/96/9/10.1063/1.3353987
2010-03-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: As doping of Si-based low-dimensional systems
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/9/10.1063/1.3353987
10.1063/1.3353987
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