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Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories
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10.1063/1.3455899
/content/aip/journal/apl/97/1/10.1063/1.3455899
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3455899
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Number of confined electrons during charging (top) and discharging (bottom) processes. In the charging process, gate voltages , 2, 3, and 4 V were applied in the device. The discharging process is performed for , but the NCs were previously charged with , 3, and 4 V. The theoretical discharging curve for is also shown for completeness. In both panels, symbols represent experimental data, and lines represent the theoretical curves. Dashed lines represent the -modified charging curves. The proposed charging and discharging mechanisms are shown as inset graphs.

Image of FIG. 2.
FIG. 2.

Ratio of the squared wave functions with and without the presence traps near the NC/oxide interface described by a point charge potential . An external bias is also applied in the system. In the top panels, the black (red) line represent the confinement potentials and squared wave functions without (with) . Values of can be estimated by looking at the ratio values in the right edge of the curves.

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/content/aip/journal/apl/97/1/10.1063/1.3455899
2010-07-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3455899
10.1063/1.3455899
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