1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
End-of-range defects in germanium and their role in boron deactivation
Rent:
Rent this article for
USD
10.1063/1.3456537
/content/aip/journal/apl/97/1/10.1063/1.3456537
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3456537
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

WBDF-TEM images of a Ge sample amorphized by 100 KeV and subsequently annealed at for 100 s taken in (a) cross-section using , (b) PV under , and (c) PV under .

Image of FIG. 2.
FIG. 2.

SIMS profiles of boron atoms implanted into preamorphized germanium (amorphization: 100 keV and boron implant: 10 keV, ). The as-implanted profile (black line) is compared with those obtained after annealing at for 45 min (red circles) and for 3 h (blue triangles). Dotted line indicates the solid solubility of B in Ge at (Ref. 16).

Image of FIG. 3.
FIG. 3.

(a) Hall dose of B implanted (10 keV ) in preamorphized Ge after thermal annealing at 400, 450, and . (b) Sheet resistance for the same samples.

Loading

Article metrics loading...

/content/aip/journal/apl/97/1/10.1063/1.3456537
2010-07-07
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: End-of-range defects in germanium and their role in boron deactivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3456537
10.1063/1.3456537
SEARCH_EXPAND_ITEM