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Calculated Sr and oxygen vacancy concentrations vs oxygen partial pressure at 900, 1200, and following Ref. 21. Doping concentrations are (a) and (b) . [Nb]/2 is also shown in (b).
Expansion of the out-of-plane lattice constant from the bulk value (0.3905 nm) and electron mobility vs growth temperature for thin films. The lattice constant was obtained from room temperature x-ray diffraction. The electron mobility was estimated at 2 K. Dashed curves are guides to the eye.
Nb density profile measured by secondary ion mass spectroscopy, normalized by the substrate nominal value, for the structure: (50 nm)/0.1 at. % Nb-doped (50 nm)/(70 nm)/0.1 at. % Nb-doped substrate.
(a) Carrier density and (b) electron mobility of thin films vs temperature for five dopant concentrations, estimated from the Hall effect. (c) Nominal dopant density vs measured values at 2 K. (d) Electron mobility of the films vs carrier density (circles), compared to oxygen deficient (squares) and Nb-doped (triangles) bulk single crystals (Refs. 2 and 3). The thickness is 500 nm for the 0.02 at. % film, 100 nm otherwise.
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