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High-power and high-speed organic three-dimensional transistors with submicrometer channels
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/content/aip/journal/apl/97/1/10.1063/1.3458867
2010-07-06
2014-07-30

Abstract

Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphthothieno[3,2-b]thiophene, extremely high current density exceeding and fast switching within are realized with an on-off ratio of . The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

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Scitation: High-power and high-speed organic three-dimensional transistors with submicrometer channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3458867
10.1063/1.3458867
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