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High-power and high-speed organic three-dimensional transistors with submicrometer channels
14.R. Parashkov, E. Becker, S. Hartmann, G. Ginev, D. Schneider, H. Krautwald, T. Dobbertin, D. Metzdorf, F. Brunetti, C. Schildknecht, A. Kammoun, M. Brandes, T. Riedl, H. -H. Johannes, and W. Kowalsky, Appl. Phys. Lett. 82, 4579 (2003).
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15.F. Laermer and A. Schilp, U.S. Patent No. 5,501,893 (5 August 1994).
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Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphthothieno[3,2-b]thiophene, extremely high current density exceeding and fast switching within are realized with an on-off ratio of . The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.
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