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Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
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/content/aip/journal/apl/97/1/10.1063/1.3459137
2010-07-07
2014-08-29

Abstract

We investigated InAsultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAsultrathin films, such as for thickness and for . These carrier mobilities are highest not only for thin films on flexible substrates but also for InAsthin films; higher than those of InAsfilmsgrown on GaAs(111)A and membranes fabricated from them.

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Scitation: Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3459137
10.1063/1.3459137
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