No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
15.M. Yokoyama, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, Appl. Phys. Express 2, 124501 (2009).
17.S. Mookerjea and S. Datta, Proceedings of the Device Research Conference (IEEE, New York, 2008), pp. 47–48, DOI: 10.1109/DRC.2008.4800730.
Article metrics loading...
We investigated InAsultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAsultrathin films, such as for thickness and for . These carrier mobilities are highest not only for thin films on flexible substrates but also for InAsthin films; higher than those of InAsfilmsgrown on GaAs(111)A and membranes fabricated from them.
Full text loading...
Most read this month