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Schematics of InGaN/GaN quantum dot LED heterostructure grown on GaN-templated c-plane sapphire substrates. The inset shows an AFM image of uncapped self-organized QDs.
(a) Measured temperature dependent PL and (b) TRPL spectra of self-organized QDs. The curve in (b) is a fit of the data by using the following stretched exponential model: .
(a) Measured electroluminescence spectra of InGaN/GaN QD LEDs with increasing current injection at 278 K and (b) the corresponding light-current characteristics. Inset in (b) shows the blueshift in the emission peak wavelength with injection current.
Measured EQE in arbitrary units peaking at . Calculated IQE based on the ABC recombination model and shown by the dashed curve is in good agreement with the EQE.
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