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InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
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10.1063/1.3460921
/content/aip/journal/apl/97/1/10.1063/1.3460921
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3460921
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Figures

Image of FIG. 1.
FIG. 1.

Schematics of InGaN/GaN quantum dot LED heterostructure grown on GaN-templated c-plane sapphire substrates. The inset shows an AFM image of uncapped self-organized QDs.

Image of FIG. 2.
FIG. 2.

(a) Measured temperature dependent PL and (b) TRPL spectra of self-organized QDs. The curve in (b) is a fit of the data by using the following stretched exponential model: .

Image of FIG. 3.
FIG. 3.

(a) Measured electroluminescence spectra of InGaN/GaN QD LEDs with increasing current injection at 278 K and (b) the corresponding light-current characteristics. Inset in (b) shows the blueshift in the emission peak wavelength with injection current.

Image of FIG. 4.
FIG. 4.

Measured EQE in arbitrary units peaking at . Calculated IQE based on the ABC recombination model and shown by the dashed curve is in good agreement with the EQE.

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/content/aip/journal/apl/97/1/10.1063/1.3460921
2010-07-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3460921
10.1063/1.3460921
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