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Ge quantum dot tunneling diode with room temperature negative differential resistance
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10.1063/1.3462069
/content/aip/journal/apl/97/1/10.1063/1.3462069
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3462069
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic design of a Ge-QD interband tunneling diode with self-organized grown Ge-QD embedded in the intrinsic region.

Image of FIG. 2.
FIG. 2.

AFM image (top) of uncapped Ge-QD after the growth of 8 ML Ge on Si (100) at with a growth rate of . A line scan shows the dot dimensions: base width of 10 to 20 nm and a height of 1 to 1.5 nm.

Image of FIG. 3.
FIG. 3.

Room temperature current density-voltage characteristics of a Ge-QD tunneling diode. The device has a radius of . In the forward direction a NDR is clearly observed between 0.1 and 0.25 V.

Image of FIG. 4.
FIG. 4.

Current density-voltage characteristics as function of temperature of a Ge-QD tunneling diode. The device radius is . The inset shows the PVCR as function of temperature. The mounted large area diodes suffered from a parasitic current which decreased PVCR of the temperature series.

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/content/aip/journal/apl/97/1/10.1063/1.3462069
2010-07-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge quantum dot tunneling diode with room temperature negative differential resistance
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3462069
10.1063/1.3462069
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