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Schematic design of a Ge-QD interband tunneling diode with self-organized grown Ge-QD embedded in the intrinsic region.
AFM image (top) of uncapped Ge-QD after the growth of 8 ML Ge on Si (100) at with a growth rate of . A line scan shows the dot dimensions: base width of 10 to 20 nm and a height of 1 to 1.5 nm.
Room temperature current density-voltage characteristics of a Ge-QD tunneling diode. The device has a radius of . In the forward direction a NDR is clearly observed between 0.1 and 0.25 V.
Current density-voltage characteristics as function of temperature of a Ge-QD tunneling diode. The device radius is . The inset shows the PVCR as function of temperature. The mounted large area diodes suffered from a parasitic current which decreased PVCR of the temperature series.
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