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High performance atomic-layer-deposited -on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown as interfacial passivation layer
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10.1063/1.3462303
/content/aip/journal/apl/97/1/10.1063/1.3462303
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3462303
/content/aip/journal/apl/97/1/10.1063/1.3462303
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/content/aip/journal/apl/97/1/10.1063/1.3462303
2010-07-08
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3462303
10.1063/1.3462303
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