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Ion versus sensitivity of ungated AlGaN/GaN heterostructure-based devices
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10.1063/1.3462323
/content/aip/journal/apl/97/1/10.1063/1.3462323
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3462323
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of device layout for the various experiments.

Image of FIG. 2.
FIG. 2.

vs normalized sheet resistance for AlGaN/GaN van-der-Pauw structures exposed to various calibration solutions, dilute acids, and dilute bases.

Image of FIG. 3.
FIG. 3.

Normalized sheet resistance of AlGaN/GaN four-point bar test-structures vs ionic molar concentration of the KOH or NaCl solutions employed.

Image of FIG. 4.
FIG. 4.

Schematic representation of the proposed Helmholtz double-layer formed near the electrolyte—AlGaN/GaN interface, depicting the appearance of negative ions at the AlGaN surface through electrostatic attraction to positively charged states on the AlGaN surface. Also shown is a schematic plot of semiconductor-electrolyte interface potential as a function of distance from the interface.

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/content/aip/journal/apl/97/1/10.1063/1.3462323
2010-07-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/1/10.1063/1.3462323
10.1063/1.3462323
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