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Schematic representation of device layout for the various experiments.
vs normalized sheet resistance for AlGaN/GaN van-der-Pauw structures exposed to various calibration solutions, dilute acids, and dilute bases.
Normalized sheet resistance of AlGaN/GaN four-point bar test-structures vs ionic molar concentration of the KOH or NaCl solutions employed.
Schematic representation of the proposed Helmholtz double-layer formed near the electrolyte—AlGaN/GaN interface, depicting the appearance of negative ions at the AlGaN surface through electrostatic attraction to positively charged states on the AlGaN surface. Also shown is a schematic plot of semiconductor-electrolyte interface potential as a function of distance from the interface.
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