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(a) HR-TEM cross section images and their corresponding FFT patterns of a-SIZO films (inset), which clearly show amorphous pattern and (b) cross-section view and line profile of a-SIZO on substrate.
XPS results of a-SIZO film after thermal annealing below . The data shows the peak position of (a) and (b) . The XPS result for an IZO film annealed at is also presented.
(a) Transfer curves of postannealed a-SIZO TFTs depending on oxygen ratio and deposition temperature. (b) Comparison of transfer curves of postannealed IZO TFT, a-GIZO TFT, and a-SIZO TFT with same deposition condition using optimized postannealing temperature. The amplitude of the hysteresis of IZO TFT and a-SIZO TFT in subthreshold region was 0.8 V and 1.4 V, respectively, at a drain-current of 3 nA.
The variation in for IZO based TFTs and a-SIZO TFT as a function of time of applied BTS. Each device was swept up to of to avoid high gate-voltage stress induced instability.
Comparison of various parameters including , , , and SS for IZO based TFTs with different stabilizer and ratios.
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