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Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below
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Image of FIG. 1.
FIG. 1.

(a) HR-TEM cross section images and their corresponding FFT patterns of a-SIZO films (inset), which clearly show amorphous pattern and (b) cross-section view and line profile of a-SIZO on substrate.

Image of FIG. 2.
FIG. 2.

XPS results of a-SIZO film after thermal annealing below . The data shows the peak position of (a) and (b) . The XPS result for an IZO film annealed at is also presented.

Image of FIG. 3.
FIG. 3.

(a) Transfer curves of postannealed a-SIZO TFTs depending on oxygen ratio and deposition temperature. (b) Comparison of transfer curves of postannealed IZO TFT, a-GIZO TFT, and a-SIZO TFT with same deposition condition using optimized postannealing temperature. The amplitude of the hysteresis of IZO TFT and a-SIZO TFT in subthreshold region was 0.8 V and 1.4 V, respectively, at a drain-current of 3 nA.

Image of FIG. 4.
FIG. 4.

The variation in for IZO based TFTs and a-SIZO TFT as a function of time of applied BTS. Each device was swept up to of to avoid high gate-voltage stress induced instability.


Generic image for table
Table I.

Comparison of various parameters including , , , and SS for IZO based TFTs with different stabilizer and ratios.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C