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Titanium nitride films for ultrasensitive microresonator detectors
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View: Figures


Image of FIG. 1.
FIG. 1.

The critical temperature of reactively sputtered TiN films as a function of the flow rate. The Ar flow rate was set to 15 SCCM (SCCM denotes cubic centimeter per minute at STP) and the total pressure to 2 mTorr. The deposition rate was 35 nm/min using 1 kW dc power, a 150 mm diameter Ti target and a target to substrate distance of 15 cm. The flow for both gases was set by thermal mass flow controllers, while the pressure in the 17.5 L sputtering chamber was maintained by adjusting the pump rate using a closed-loop system consisting of a capacitance manometer, a butterfly-type throttle valve, and a feedback controller. The inset provides a schematic illustration of the geometry of the close-packed resonator array, with dark regions representing TiN metallization.

Image of FIG. 2.
FIG. 2.

(a) deep resonance measured at and with , , and . The device was a close-packed array of lumped-element resonators made using a TiN film with , , and . In addition, six resonances with were seen, and had . The image (b) shows a single lumped-element resonator. The polar plot (c) clearly shows the expected resonance loop.

Image of FIG. 3.
FIG. 3.

NEP for frequency readout (dashed lines) and dissipation readout (solid lines) measured for a , TiN CPW resonator, for readout powers , −109, −105, −101, and −97 dBm (top to bottom). The resonator center strip is wide and 4.5 mm long, and has a gap to ground, giving and . Transmission data measured at and give , , and . This resonance is the third harmonic of the fundamental at 1.794 GHz, which was also observed but lies below the amplifier’s 4–12 GHz band. Microwave pulse experiments and cosmic ray events indicate at , consistent with values seen in photon detection experiments with other 1.1 K TiN devices.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Titanium nitride films for ultrasensitive microresonator detectors