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The influence of sputtering power and flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
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10.1063/1.3488823
/content/aip/journal/apl/97/10/10.1063/1.3488823
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/10/10.1063/1.3488823

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section of (a) the HIZO TFT and (b) the HIZO photodiode, along with an incoming light provided by the LED backlight unit.

Image of FIG. 2.
FIG. 2.

(a) The current-voltage (I-V) characteristics in the dark and under visible light illumination for the HIZO photodiodes fabricated under three different sputtering conditions (A, C, E). (b) The photocurrent map as a function of sputtering power and gas flow ratio.

Image of FIG. 3.
FIG. 3.

Transfer curves of (a) device A and (b) device E, measured in dark and under exposure to white light with a luminance of . (c) The shift values as a function of the applied NBIS time for devices A and E. The inset shows the DOS profiles, which were acquired by the photoexcited charge-collection spectroscopy for devices A and E.

Tables

Generic image for table
Table I.

Initial transfer characteristics of the HIZO TFTs (A and E). The transfer characteristics under visible light illumination are shown in brackets.

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/content/aip/journal/apl/97/10/10.1063/1.3488823
2010-09-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/10/10.1063/1.3488823
10.1063/1.3488823
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