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Schematic cross-section of (a) the HIZO TFT and (b) the HIZO photodiode, along with an incoming light provided by the LED backlight unit.
(a) The current-voltage (I-V) characteristics in the dark and under visible light illumination for the HIZO photodiodes fabricated under three different sputtering conditions (A, C, E). (b) The photocurrent map as a function of sputtering power and gas flow ratio.
Transfer curves of (a) device A and (b) device E, measured in dark and under exposure to white light with a luminance of . (c) The shift values as a function of the applied NBIS time for devices A and E. The inset shows the DOS profiles, which were acquired by the photoexcited charge-collection spectroscopy for devices A and E.
Initial transfer characteristics of the HIZO TFTs (A and E). The transfer characteristics under visible light illumination are shown in brackets.
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