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The influence of sputtering power and flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
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10.1063/1.3488823
/content/aip/journal/apl/97/10/10.1063/1.3488823
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/10/10.1063/1.3488823
/content/aip/journal/apl/97/10/10.1063/1.3488823
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/content/aip/journal/apl/97/10/10.1063/1.3488823
2010-09-10
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/10/10.1063/1.3488823
10.1063/1.3488823
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