Full text loading...
As mole fraction (x) in films measured by RBS/PIXE as a function of growth temperature under high and low Ga flux condition.
Cross-sectional TEM micrographs and the SAD patterns for samples: (a) ; (b) ; (c) SAD pattern from the Pyrex substrate; (d) SAD from the sample shown in (a); (e) SAD from the sample shown in (b); [(f) and (g)] high resolution images from respected samples indicating amorphous structure.
PR spectra from thin films on pyrex substrate with x in the range of 0.15–0.45. The inset shows a comparison between the PR and absorption spectra from a sample.
Band gap energy as a function of As content x for alloys. Band gap values from both crystalline and amorphous alloys grown on sapphire and Pyrex are shown together with results from reported crystalline As-rich and N-rich alloys (from Refs. 3 and 8). Calculated composition dependence of the band gap of alloys based on the BAC is also shown.
Article metrics loading...