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Low gap amorphous alloys grown on glass substrate
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View: Figures


Image of FIG. 1.
FIG. 1.

As mole fraction (x) in films measured by RBS/PIXE as a function of growth temperature under high and low Ga flux condition.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM micrographs and the SAD patterns for samples: (a) ; (b) ; (c) SAD pattern from the Pyrex substrate; (d) SAD from the sample shown in (a); (e) SAD from the sample shown in (b); [(f) and (g)] high resolution images from respected samples indicating amorphous structure.

Image of FIG. 3.
FIG. 3.

PR spectra from thin films on pyrex substrate with x in the range of 0.15–0.45. The inset shows a comparison between the PR and absorption spectra from a sample.

Image of FIG. 4.
FIG. 4.

Band gap energy as a function of As content x for alloys. Band gap values from both crystalline and amorphous alloys grown on sapphire and Pyrex are shown together with results from reported crystalline As-rich and N-rich alloys (from Refs. 3 and 8). Calculated composition dependence of the band gap of alloys based on the BAC is also shown.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low gap amorphous GaN1−xAsx alloys grown on glass substrate