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Schematic energy alignment at the PEDT:PSSH/TFB interface. (a) UPS results from the single heterojunction. (b) EA results from the completed device. One division corresponds to 1 eV.
EA spectra of the ITO/PEDT:PSSM/TFB/Ca diodes. Negative reflectance corresponds to absorption in-phase with the excitation voltage on ITO: ; . Top panel: in-phase EA spectra for diode at 295 K for different biases. Also shown are the absorption spectrum of TFB (dashed line) and polaron absorption spectrum of chemically -doped TFB (black solid line) with , on arbitrary scales. Middle panel: in-phase EA spectra for diode at 30 K for different biases. Bottom panel: (solid lines) in-phase EA spectra for (bottom spectrum in left plot) and (top spectrum in left plot) diodes at 295 K for ; (dots) in-phase EA spectra for corresponding ITO/PEDT:PSSM/polystyrene/Ca metal–insulator–metal structures. The quadrature spectra are zero in all cases.
Bias dependence of the interface charge density vs plots at 295 and 30 K.
Variable temperature characteristics of diodes in the log-linear and log-log representation. has been subtracted from the voltage. (a) ITO/PEDT:PSSH/75 nm TFB/Ca. (b) ITO/PEDT:PSSH/75 nm . (c) ITO/PEDT:PSSM(Na,TMA)/75 nm . Data for (b) and (c) are replotted from Ref. 6.
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