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Energy band structure of the single crystalline heterojunction determined by x-ray photoelectron spectroscopy
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10.1063/1.3486116
/content/aip/journal/apl/97/11/10.1063/1.3486116
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3486116

Figures

Image of FIG. 1.
FIG. 1.

Schematic energy band diagram at a heterojunction interface.

Image of FIG. 2.
FIG. 2.

(a) Shallow CL and VB spectra for a IBA-exposed Ge(001) substrate, a MgO(10 nm)/Ge, and MgO(2, 3, 4 nm)/Ge heterojunctions. The blue line marks the shift of Ge CL position after MgO deposition. XPS spectra of (b) Ge CL and (c) VB of the Ge(001), (d) Mg CL and (e) VB of the MgO (10 nm)/Ge, and (f) Ge and (g) Mg CLs of the MgO /Ge. The closed circle, cyan, and magenta lines represent raw data, background, and fit curve, respectively.

Image of FIG. 3.
FIG. 3.

(a) Energy band diagram of IBA-exposed Ge(001) substrate and heterojunction determined by XPS measurements. A type-I band alignment at the MgO/Ge interface and a 1.49 eV band banding in the Ge side are formed. (b) Schematic illustration of the band alignment of the including the large band bending. The in Ge side denotes the positive charge due to electron transfer from the Ge toward the acceptor states at the MgO interface. The and (−) at the MgO interface denotes the positive interface charge due to empty donors above the CBM of Ge and the negative charge due to filled acceptors below the VBM of Ge , respectively.

Tables

Generic image for table
Table I.

XPS measured energy parameters for a IBA-exposed Ge(001) substrate, a MgO(10 nm)/Ge(001), and MgO(2, 3, 4 nm)/Ge(001) heterojunctions.

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/content/aip/journal/apl/97/11/10.1063/1.3486116
2010-09-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy band structure of the single crystalline MgO/n-Ge(001) heterojunction determined by x-ray photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3486116
10.1063/1.3486116
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