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Schematic energy band diagram at a heterojunction interface.
(a) Shallow CL and VB spectra for a IBA-exposed Ge(001) substrate, a MgO(10 nm)/Ge, and MgO(2, 3, 4 nm)/Ge heterojunctions. The blue line marks the shift of Ge CL position after MgO deposition. XPS spectra of (b) Ge CL and (c) VB of the Ge(001), (d) Mg CL and (e) VB of the MgO (10 nm)/Ge, and (f) Ge and (g) Mg CLs of the MgO /Ge. The closed circle, cyan, and magenta lines represent raw data, background, and fit curve, respectively.
(a) Energy band diagram of IBA-exposed Ge(001) substrate and heterojunction determined by XPS measurements. A type-I band alignment at the MgO/Ge interface and a 1.49 eV band banding in the Ge side are formed. (b) Schematic illustration of the band alignment of the including the large band bending. The in Ge side denotes the positive charge due to electron transfer from the Ge toward the acceptor states at the MgO interface. The and (−) at the MgO interface denotes the positive interface charge due to empty donors above the CBM of Ge and the negative charge due to filled acceptors below the VBM of Ge , respectively.
XPS measured energy parameters for a IBA-exposed Ge(001) substrate, a MgO(10 nm)/Ge(001), and MgO(2, 3, 4 nm)/Ge(001) heterojunctions.
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