1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells
Rent:
Rent this article for
USD
10.1063/1.3486470
/content/aip/journal/apl/97/11/10.1063/1.3486470
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3486470
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental and simulated HRXRD profile for (004) symmetric reflection of the InP/GaAs MQW sample where an inset on the right hand side shows the cross-sectional TEM micrograph of the same sample. Left inset shows a typical layer structure for a single InP/GaAs ultrathin QW.

Image of FIG. 2.
FIG. 2.

10 K PL spectra for all the ultrathin QW samples at 0.7 mW of the excitation power. Inset shows a typical band diagram for InP/GaAs QWs indicating a spatially indirect recombination of the carriers.

Image of FIG. 3.
FIG. 3.

Transition energy vs cube root of the excitation power along with a linear fit for sample A at 10 K. Inset shows the log log plot of the integrated PL intensity vs excitation power along with a linear fit for the same sample.

Image of FIG. 4.
FIG. 4.

Carrier depth profile obtained from the room temperature C-V measurements for all the ultrathin QW samples.

Loading

Article metrics loading...

/content/aip/journal/apl/97/11/10.1063/1.3486470
2010-09-17
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3486470
10.1063/1.3486470
SEARCH_EXPAND_ITEM