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Experimental and simulated HRXRD profile for (004) symmetric reflection of the InP/GaAs MQW sample where an inset on the right hand side shows the cross-sectional TEM micrograph of the same sample. Left inset shows a typical layer structure for a single InP/GaAs ultrathin QW.
10 K PL spectra for all the ultrathin QW samples at 0.7 mW of the excitation power. Inset shows a typical band diagram for InP/GaAs QWs indicating a spatially indirect recombination of the carriers.
Transition energy vs cube root of the excitation power along with a linear fit for sample A at 10 K. Inset shows the log log plot of the integrated PL intensity vs excitation power along with a linear fit for the same sample.
Carrier depth profile obtained from the room temperature C-V measurements for all the ultrathin QW samples.
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