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Energy dispersion of the cavity and exciton modes (dashed lines) and lower, middle, and upper polariton (solid lines) as a function of (a) detuning and (b) angle for a −4 meV detuning. The open markers in (a) correspond to experimental data and their size is proportional to the LO phonons scattering strength. The dotted-dashed line (a) and solid ellipse (b) indicate the energy of the middle polariton bottleneck.
Power dependence of (a) the emission intensity, (b) the energy blueshift, and (c) the linewidth of the LP ground state as a function of the excitation power for −4 meV detuning. The below threshold power dependence data can be fitted with a straight line (a), whose slope can give information on the carrier relaxation efficiency. Strong coupling is confirmed by the below (d) and above (e) threshold snapshots of the dispersion relation.
Experimental data (markers) and theoretical fits (lines) for the below threshold slope (dots) and the stimulation threshold (squares) for a range of detunings.
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