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Experimental results of buffer (a) and device (b) breakdown voltage of AlGaN/GaN/AlGaN DHFETs grown on Si and SiC.
High-voltage TCAD simulations of breakdown voltage in AlGaN/GaN SHFETs. Off-state curves with and without Si (a). Device breakdown voltage for devices with and without Si (b).
Depth profile of electron density (a) and impact ionization factor (b) in AlGaN/GaN SHFETs with and without Si substrate and buffer thickness.
Experimental results of buffer and device breakdown voltage measured on sample A before and after Si removal.
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