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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
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10.1063/1.3488024
/content/aip/journal/apl/97/11/10.1063/1.3488024
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3488024
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental results of buffer (a) and device (b) breakdown voltage of AlGaN/GaN/AlGaN DHFETs grown on Si and SiC.

Image of FIG. 2.
FIG. 2.

High-voltage TCAD simulations of breakdown voltage in AlGaN/GaN SHFETs. Off-state curves with and without Si (a). Device breakdown voltage for devices with and without Si (b).

Image of FIG. 3.
FIG. 3.

Depth profile of electron density (a) and impact ionization factor (b) in AlGaN/GaN SHFETs with and without Si substrate and buffer thickness.

Image of FIG. 4.
FIG. 4.

Experimental results of buffer and device breakdown voltage measured on sample A before and after Si removal.

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/content/aip/journal/apl/97/11/10.1063/1.3488024
2010-09-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3488024
10.1063/1.3488024
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