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Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
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10.1063/1.3488825
/content/aip/journal/apl/97/11/10.1063/1.3488825
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3488825
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band edges of the HH, LH, and CH bands as a function of Al-content for ternary compounds.

Image of FIG. 2.
FIG. 2.

TE- and TM-polarized (a) spontaneous emission rate and (b) peak material gain for 3 nm thick QWs with AlN barriers as a function of different Al-contents .

Image of FIG. 3.
FIG. 3.

(a) Spontaneous emission radiative recombination rate as a function of carrier density, and (b) TE-polarized and TM-polarized optical gain spectra for 3 nm QWs with AlN barriers with , 70%, and 80%.

Image of FIG. 4.
FIG. 4.

(a) TM-polarized material gain and (b) TE-polarized material gain as a function of carrier density for 3 nm thick QWs with AlN barriers with , 70%, and 80%.

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/content/aip/journal/apl/97/11/10.1063/1.3488825
2010-09-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3488825
10.1063/1.3488825
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