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Energy band edges of the HH, LH, and CH bands as a function of Al-content for ternary compounds.
TE- and TM-polarized (a) spontaneous emission rate and (b) peak material gain for 3 nm thick QWs with AlN barriers as a function of different Al-contents .
(a) Spontaneous emission radiative recombination rate as a function of carrier density, and (b) TE-polarized and TM-polarized optical gain spectra for 3 nm QWs with AlN barriers with , 70%, and 80%.
(a) TM-polarized material gain and (b) TE-polarized material gain as a function of carrier density for 3 nm thick QWs with AlN barriers with , 70%, and 80%.
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