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Structural characterization of amorphous and used as solid electrolyte for nonvolatile switches
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of solid-electrolyte switch operation principle. (b) Current-voltage curves of the switch with 15 nm thick or with typical annealing of 45 nm node Cu interconnections at for 300 min. The ON current is controlled to be below by a metal-oxide-semiconductor field-effect transistor (MOSFET). (c) Cycle endurance of the switch with 13 nm thick at RT with the MOSFET.

Image of FIG. 2.
FIG. 2.

TEM images of (a) without annealing, (b) with annealing, (c) without annealing, and (d) with annealing.

Image of FIG. 3.
FIG. 3.

Density and number density of and electrolytes before and after annealing at . The inset shows the thermal desorption spectra of from . Temperature was raised from RT to at a rate of .

Image of FIG. 4.
FIG. 4.

Radial structure functions obtained by Fourier transforms of edge EXAFS for or , and a simulated one assuming a structure. Inset: enlargement of the peak at around , the first shell of Ta–O bonds.

Image of FIG. 5.
FIG. 5.

(a) XAS and (b) radial structure functions of edge for , CuO, and thermally diffused Cu in .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural characterization of amorphous Ta2O5 and SiO2–Ta2O5 used as solid electrolyte for nonvolatile switches