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(a) Schematic of solid-electrolyte switch operation principle. (b) Current-voltage curves of the switch with 15 nm thick or with typical annealing of 45 nm node Cu interconnections at for 300 min. The ON current is controlled to be below by a metal-oxide-semiconductor field-effect transistor (MOSFET). (c) Cycle endurance of the switch with 13 nm thick at RT with the MOSFET.
TEM images of (a) without annealing, (b) with annealing, (c) without annealing, and (d) with annealing.
Density and number density of and electrolytes before and after annealing at . The inset shows the thermal desorption spectra of from . Temperature was raised from RT to at a rate of .
Radial structure functions obtained by Fourier transforms of edge EXAFS for or , and a simulated one assuming a structure. Inset: enlargement of the peak at around , the first shell of Ta–O bonds.
(a) XAS and (b) radial structure functions of edge for , CuO, and thermally diffused Cu in .
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